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| High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA G IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 C G C VCES = 1200 V = 60 A IC25 VCE(sat) typ = 2.4 V TO-247 AD (IXDH) E IXDH 30N120 IXDT 30N120 E IXDH 30N120 D1 IXDT 30N120 D1 G C E C (TAB) TO--268 AA (IXDT) Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 20 kW Continuous Transient TC = 25C TC = 90C TC = 90C, tp = 1 ms VGE = 15 V, TJ = 125C, RG = 47 W Clamped inductive load, L = 30 H VGE = 15 V, VCE = VCES, TJ = 125C RG = 47 W, non repetitive TC = 25C IGBT Diode Maximum Ratings 1200 1200 20 30 60 38 76 ICM = 50 VCEK < VCES 10 300 135 -55 ... +150 -55 ... +150 300 V V V V A A A A s W W C C C q q G E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Features q q q q q q q q q NPT IGBT technology low saturation voltage low switching losses square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy paralleling MOS input, voltage controlled optional ultra fast diode International standard packages Advantages Space savings High power density IXDT: surface mountable high power package 1.1/10 Nm/lb.in. 6 g q Typical Applications q Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25C TJ = 125C 2.5 6.5 V V q q q q V(BR)CES VGE(th) ICES IGES VCE(sat) VGE = 0 V IC = 1 mA, VCE = VGE VCE = VCES AC motor speed control DC servo and robot drives DC choppers Uninteruptible power supplies (UPS) Switch-mode and resonant-mode power supplies 1.5 mA mA 500 nA VCE = 0 V, VGE = 20 V IC = 30 A, VGE = 15 V 2.4 2.9 V 031 (c) 2000 IXYS All rights reserved 1-4 IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1650 VCE = 25 V, VGE = 0 V, f = 1 MHz IC = 30 A, VGE = 15 V, VCE = 0.5 VCES 250 110 120 100 Inductive load, TJ = 125C IC = 30 A, VGE = 15 V, VCE = 600 V, RG = 47 W 70 500 70 4.6 3.4 pF pF pF nC ns ns ns ns mJ mJ 0.42 K/W Package with heatsink compound 0.25 K/W Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 AEP 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-247 AD Outline Cies Coes Cres Qg td(on) tr td(off) tf Eon Eoff RthJC RthCK Reverse Diode (FRED) [D1 version only] Symbol VF IF IRM trr trr RthJC Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 2.5 2.0 2.7 V V A A A ns ns 1 K/W IF = 30 A, VGE = 0 V IF = 30 A, VGE = 0 V, TJ = 125C TC = 25C TC = 90C IF = 30 A, -diF/dt = 400 A/s, VR = 600 V VGE = 0 V, TJ = 125C IF = 1 A, -diF/dt = 100 A/s, VR = 30 V, VGE = 0 V 60 35 20 200 40 TO-268 AA Outline Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161 (c) 2000 IXYS All rights reserved 2-4 IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 60 TJ = 25C VGE=17V 15V 13V 11V 60 TJ = 125C VGE=17V 15V 13V A 50 IC A 50 IC 40 40 30 20 9V 11V 30 20 10 0 0.0 9V 10 0 0.0 0.5 1.0 1.5 2.0 2.5 VCE 3.0 V 0.5 1.0 1.5 2.0 2.5 3.0 VCE 3.5 V Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 60 A 50 IC VCE = 20V TJ = 25C 80 A 70 IF 60 50 40 30 20 TJ = 25C TJ = 125C 40 30 20 10 0 5 6 7 8 9 10 VGE 10 0 11 V 0 1 2 VF 3 V 4 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 60 A IRM trr 20 V VCE = 600V IC = 25A 300 ns trr VGE 15 40 200 10 20 5 TJ = 125C VR = 600V IF = 30A IRM 100 IXDH30N120 0 0 20 40 60 80 100 120 140 nC QG 0 0 200 400 600 800 A/ms -di/dt 0 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode (c) 2000 IXYS All rights reserved 3-4 IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 14 12 mJ Eon 10 140 ns 120 100 td(on) tr Eon 80 VCE = 600V VGE = 15V RG = 47W TJ = 125C 6 mJ 5 t Eoff Eoff td(off) 600 ns 500 400 t VCE = 600V VGE = 15V RG = 47W TJ = 125C 4 3 8 6 4 2 0 0 300 200 100 0 60 40 20 0 2 1 0 0 10 20 30 40 IC tf 50 A 10 20 30 IC 40 50 A Fig. 7 Typ. turn on energy and switching times versus collector current 12 mJ 10 Eon 240 td(on) ns Eon 180 tr t 120 Fig. 8 Typ. turn off energy and switching times versus collector current 5 mJ Eoff 1500 VCE = 600V VGE = 15V IC = 25A TJ = 125C 8 6 4 VCE = 600V VGE = 15V IC = 25A TJ = 125C 4 3 2 td(off) Eoff ns 1200 t 900 600 300 tf 0 60 2 0 0 40 80 120 160 RG 200 1 0 0 40 80 120 160 RG 200 W 0 240 W 240 Fig. 9 Typ. turn on energy and switching times versus gate resistor 60 A 50 ICM 10 K/W 1 ZthJC RG = 47W TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor diode IGBT 40 30 20 10 0 0 200 400 600 800 1000 1200 V VCE 0.1 0.01 0.001 single pulse IXDH30N120 0.0001 0.00001 0.0001 0.001 0.01 t 0.1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance (c) 2000 IXYS All rights reserved 4-4 |
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